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A semiconductor device includes trench gate structures that extend from a first surface into a semiconductor body of silicon carbide. The trench gate

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Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened

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20091219-A coherent shape or element of a composition characterized by having a core bonded by regrowth of silicon carbide is produced by heating par

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Sintered and monocrystalline black and green silicon carbide - Chemical compositions and optical properties on ResearchGate, the professional network for

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| Growth and Self-Assembly of Silicon–Silicon Carbide

This work describes the growth of silicon–silicon carbide nanoparticles (Si–SiC) and their self-assembly into worm-like 1D hybrid nanostructures