
of Binary Powder Mixing in Sintering of Fine Silicon Carbide
Mixing in Sintering of Fine Silicon Carbide related to the author Cited by (1) d=0.08 μ gave relative density of 98%,
Mixing in Sintering of Fine Silicon Carbide related to the author Cited by (1) d=0.08 μ gave relative density of 98%,
Request PDF on ResearchGate | One-step synthesis of silicon carbide foams supported hierarchical porous sludge-derived activated carbon as efficient odor gas
Request PDF on ResearchGate | Effect of silicon carbide particle size on microstructure and properties of a coating layer on steel produced by TIG
silicon carbide metal-semiconductor field effect 1 x 1 OI6 to about 1 x 101 cm 3, the about 950 °C for a time of about 180 minutes
N. R. Pereira et al., High Current Silicon Carbide Diodes as Dose The detection system is based on a Cd0.9Zn0.1Te crystal of 3x3x2 mm,
This work describes the growth of silicon–silicon carbide nanoparticles (Si–SiC) and their self-assembly into worm-like 1D hybrid nanostructures
1. A silicon carbide semiconductor device, comprising: a silicon carbide substrate; a first semiconductor layer of a first conductivity type that is
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A semiconductor device includes trench gate structures that extend from a first surface into a semiconductor body of silicon carbide. The trench gate
Dr. Yu. A. Vodakov; E. N. Mokhov; M. G. Ramm; A. D. Roenkov, 1979: Epitaxial growth of silicon carbide layers by sublimation sandwich method
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Silicon carbide matrix composite material (1) comprising silicon carbide matrix (2) as a host. The silicon carbide matrix (2) comprises first silicon
Request PDF on ResearchGate | Residual Stresses in Silicon Carbide–Zircon Composites from Thermal Expansion Measurements and Fiber Pushout Tests | Coefficien
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A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A
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Determination of total carbon in silicon carbide by gravimetry of carbonAdd 2.0 g of sodium hydroxide and 1.0 g of sodium peroxide as
The etching rate profile over the 50-mm-diameterSilicon Carbide Etching Rate Profile by Chlorine with various C/Si ratios of source gases (0.6
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Rae Hyeong Ryu; Kee Sung Lee; Young-Wook Kim, 2009: Indentation and contact damages on grain boundary controlled silicon carbide ceramics Silicon infilt
properties of pressure-sintered silicon carbide. density when the amount of carbon exceed 1.0 grain boundaries, which will decrease the density
US6902964B2 - Methods of fabricating delta doped silicon carbide metal- the buffer layer may have a carrier concentration of about 1.0×1016 cm
An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon
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The use of a germanium carbide (GeC), or a germanium silicon carbide (GeSiC) layer as a floating gate material to replace heavily doped polysilicon (
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