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optimum silicon carbide paste

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The temperature (T E ) above which optimal growth takes place during plasma‐enhanced chemical vapor deposition of undoped hydrogenated amorphous siliconcarbi

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Calculation on Optimum Si-doping Content in Boron Carbide

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【PDF】Optimum Parameters for Wetting Silicon Carbide by Aluminum

Optimum Parameters for Wetting Silicon Carbide by Aluminum Alloys M.I. PECH-CANUL, R.N. KATZ, and M.M. MAKHLOUF The effect of magnesium and silicon

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and thermal analysis of lightweight silicon carbide mirror

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Optimum Structural Design of Lightweight Silicon Carbide Mirror in Cassegrain System Yuanyuan Han, Yumin Zhang, Jiecai Han, Jianhan Zhang, Wang Yao, and