Products

Home Productspelelas silikon kordibe materials

pelelas silikon kordibe materials

Optical properties and Zeeman spectroscopy of niobium in

Photoluminescence properties and materialsImpurity and defect levelsKordina, OlofSon, Nguyen TIvády, ViktorGali, AdamAbrikosov, Igor A

Effect of vapor composition on polytype homogeneity of

Hallin, O. Kordina, and E. Janzé,n,  Effect of vapor composition on polytype homogeneity of epitaxial silicon carbide,  J. Appl. Phys. ,

Optical properties and Zeeman spectroscopy of niobium in

Photoluminescence properties and materialsImpurity and defect levelsKordina, OlofSon, Nguyen TIvády, ViktorGali, AdamAbrikosov, Igor A

Silicon carbide crystal growth in a CVD reactor using

A CVD reactor chamber for use in processing the method.Janzén, ErikKordina, Olof

Silicon carbide Schottky diodes and fabrication method

A semiconductor device and method of formation wherein a disjointed termination layer 102 is formed around a Schottky metal region 110. A SiC substrate

A 4.5 kV 6H silicon carbide rectifier

Kordina, O., Bergman, J.P., Henry, A., Jansen, E., Savage, S., Andre, J., Ramberg, L.P., Lindefelt, U., Hermansson, W, and Bergman,

arash m dehkordi 2015

materials prepared by mechanical alloying and Therefore, the thermal conductivity can be furtherZamanipour, Z., Shi, X., Dehkordi, A.M.,

Reduction of breakage losses in silicon-cell processing

From these elementary facts it can be concluded,be considered: The prevention of formation or Beinert, JKübler, RKordisch, HKönczöl,

VSi based vector-magnetometry in 4H-Silicon Carbide - status

Niethammer, MatthiasWidmann, MatthiasLee, SangYunStenberg, PontusKordina, OlleOhshima, TakeshiSon, NguyenJanzen, ErikWrachtrup, J

Silicon carbide Schottky diodes and fabrication method

A semiconductor device and method of formation wherein a disjointed termination layer 102 is formed around a Schottky metal region 110. A SiC substrate

Fast chemical sensing with metal-insulator silicon carbide

IEEE Electron Device LettersTobias, P.Baranzahi, A.Spetz, A.L.Kordina, O.Janzen, E.Lundstrom, I

[IEEE 2004 International Symposium on Electromagnetic

doi:10.1109/isemc.2004.1349886Jeffrey, I.LoVetri, J.Kordi, B

Silicon carbide for power devices

semiconductor materialssilicon compounds=105 nsecs and maximum operating frequencyGlass, O. Kordina, C. H. Carter Jr, Silicon carbide for power

Studies on fracture and strength of photovoltaic silicon

Structures II 1991, 993-994, 1991-08-01Kordisch, HSummaries of Technical Papers of Meeting Architectural Institute of Japan Structures II

Silicon carbide for power devices

semiconductor materialssilicon compounds=105 nsecs and maximum operating frequencyGlass, O. Kordina, C. H. Carter Jr, Silicon carbide for power

Study of the hydrogen etching of silicon carbide substrates

Olof Kordina E Janzen In book: Silicon Carbide and Related Materials from the publishers actual policy or licence agreement may be applicable

Silicon vacancy related defect in 4H and 6H SiC

These triplet signals can therefore be detected separately and only then canE. SörmanN. T. SonW. M. ChenO. KordinaE. Janzén

A 4.5 kV 6H silicon carbide rectifier

Kordina, O., Bergman, J.P., Henry, A., Jansen, E., Savage, S., Andre, J., Ramberg, L.P., Lindefelt, U., Hermansson, W, and Bergman,

SILICON CARBIDE SCHOTTKY DIODES AND FABRICATION METHOD

SILICON CARBIDE SCHOTTKY DIODES AND FABRICATION METHODOlof Claes Erik KORDINA

The origin of cubic polytype inclusions in CVD-grown

AO KonstantinovC HallinB PetzO KordinaE JanzenInternational Symposium on Compound Semiconductors

arash m dehkordi 2015

materials prepared by mechanical alloying and Therefore, the thermal conductivity can be furtherZamanipour, Z., Shi, X., Dehkordi, A.M.,