sublimation growth of silicon carbide single crystals - PDF
Transient temperature phenomena during sublimation growth of silicon carbide single crystals Olaf Klein and Peter Philip July 18, 22 Abstract In this article,
Transient temperature phenomena during sublimation growth of silicon carbide single crystals Olaf Klein and Peter Philip July 18, 22 Abstract In this article,
Low defect density, low impurity bulk single crystals of AlN, SiC and AlN:SiC alloy are produced by depositing appropriate vapor species of Al, Si, N
Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method
Depth-sensing nanoindentation tests were made on single-crystal silicon wafers at various loads using a sharp Berkovich indenter, and the resulting indents
A fully wafer-level packaged single-crystal silicon single-pole nine-throw (SP9T) MEMS switch using benzocyclobutene as a packaging adhesive layer is
Title: Indentation in single-crystal 6H silicon carbide: Experimental SiC is brittle in bulk form, however, at small component length-scales
629-688 Special Issue: Crystal Issue 9-10 (Sep 2015) , pp. 559-628 Issue 8 (Aug 2015) , pp. 499-558 Issue 7 (Jul 2015) , pp. 439
(54) PRODUCTION OF BULK SINGLE CRYSTALS OF SILICON CARBIDE VERFAHREN ZUR HERSTELLUNG VOLUMENEINKRISTALLEN AUS SILIZIUM-KARBID PRODUCTION EN VRAC DE MONOCRIST
Request PDF on ResearchGate | OPTICAL NUCLEAR-MOMENT POLARIZATION IN PLASTICALLY STRAINED SILICON SINGLE CRYSTALS. | In research on broken bonds in OP
Using the methods of the field emission microscopy, the condensation of Si on the W surface at various temperatures T of the substrate and
We realize a potential platform for an efficient spin-photon interface, namely negatively-charged silicon-vacancy centers in a diamond membrane coupled to
This paper analyzes the effect of the anisotropy of single crystal silicon on the frequency split of the vibrating ring gyroscope, operated in the n =
Nakamura, K.; Kakibayashi, H.; Kanehori, K.; Tanaka, N., 1997: Position dependence of the visibility of a single gold atom in silicon crystals in
Bulk, low impurity aluminum nitride:silicon carbide (AlN:SiC) alloy single crystals are grown by deposition of vapor species containing Al, Si, N and C
Abstract— The dependence of the strain fields arising in the operating parts (units) of a silicon X-ray interferometer under mechanical impact
In order to understand the single crystal silicon ultra-precision cutting process of influence of cutting parameters and tool rake angle on cutting force,
Bulk, low impurity silicon carbide single crystals are grown by deposition of vapor species containing silicon and vapor species containing carbon on a
Patent application title: METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THERMAL TREATMENT, AND LOW-IMPEDANCE MONOCRYSTALLINE SILICON CARBIDE
Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened
Wafers from three heights and two different lateral positions (corner and centre) of four industrial multicrystalline silicon ingots were analysed with respect
Study of high-temperature Smart Cut™: Application to thin films of single crystal silicon and silicon-on-sapphire films Raphael Meyer 1 Oleg Konon
Silicon carbide (SiC) is a valuable electronic material for high-temperature and high-power applications. The two most studied forms of SiC are the 6H
SEM single crystal silicon wafer single-sided polishing experimental research high-purity single crystal silicon wafer size can
Han, X. S.; Hu, Y.-Z.; Yu, S., 2008: Molecular dynamics analysis micro-mechanism of ductile machining single crystal silicon by means of M
A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source
Download Citation on ResearchGate | On Dec 1, 2018, H. R. Drmeyan and others published X-ray Interferometric Investigation of Strain Fields in Silicon
Copyright © FengYuan Metallurgical Materials Co., Ltd. | sitemap