
N-channel Silicon Carbide Power MOSFET for Automotive_SCT3160
Raman and infrared measurements suggest the varied nature of surfaces of silicon carbide nanocrystals which elucidate the behavior of the silicon carbide
Raman and infrared measurements suggest the varied nature of surfaces of silicon carbide nanocrystals which elucidate the behavior of the silicon carbide
Download Citation on ResearchGate | Radar absorbing combinatorial metamaterial based on silicon carbide/carbon foam material embedded with split square ring
This work describes the growth of silicon–silicon carbide nanoparticles (Si–SiC) and their self-assembly into worm-like 1D hybrid nanostructures
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2016511-Get this from a library! Silicon carbide radiation detectors. [Marzio De Napoli] Create lists, bibliographies and reviews: or Search Wo
In feeding a silicon carbide-forming gas generated by a method of heat-subliming silicon carbide or the like to the surface of a seed crystal (2) so
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Abstract: Silicon carbide (SiC) is a wide band-gap semiconductor material with many excellent properties, showing great potential in fusion neutron
2013812-Electron-ion coupling effects on radiation damage in cubic silicon carbide,,A two-temperature model has been used to investigate the effects
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Silicon Carbide Radiation Detectors Hardbackby Marzio De Napoli Out of stock - More expected soon Information Format: Hardback Pages: 154 pages, tables
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The use of a germanium carbide (GeC), or a germanium silicon carbide (GeSiC) layer as a floating gate material to replace heavily doped polysilicon (
Evaluation of Mechanical Properties of Glass Fiber Reinforced Epoxy Polymer Composites with Alumina, Titanium dioxide and Silicon Carbide Fillers
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2019319-SiC MOSFET devices support highly efficient, rugged and cost-effective high frequency designs in automotive, renewable energy and data cente
2013812-Electron-ion coupling effects on radiation damage in cubic silicon carbide,,A two-temperature model has been used to investigate the effects
2013812-Electron-ion coupling effects on radiation damage in cubic silicon carbide,,A two-temperature model has been used to investigate the effects
lookout for new detector materials and protocols to diagnose such radiation N. R. Pereira et al., High Current Silicon Carbide Diodes as Dose
Gurov, Y. B.; Rozov, S. V.; Sandukovsky, V. G.; Yakushev, E. A.; Hrubcin, L.; Zat’ko, B., 2015: Characteristics of silicon carbide
US4585675A - Alumina silicon carbide, and silicon primary protective coatingsThe retort is then heated by radiation. Generally, the retort and its
(CVD) silicon carbide (SiC) has been shown to be one of the most promising materials considering strength, creep, oxidation, fabricability, and cost
better radiation resistance than silicon cost of high-quality diamond materials14,15,SiC detector composited by high-quality lightly
Silicon carbide matrix composite material (1) comprising silicon carbide matrix (2) as a host. The silicon carbide matrix (2) comprises first silicon
Electronics360 talks with UnitedSiC about silicon carbide, a wide band gap semiconductor material poised to drive key high-efficiency aspects of a greener
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